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TIP29

Specifications

SKU: 12611511

BUY TIP29 https://www.utsource.net/itm/p/12611511.html

Parameter Symbol Min Typical Max Unit
Collector-Emitter Voltage VCE - 60 - V
Emitter-Base Voltage VEB -1.8 - -3 V
Collector Current IC - 3 - A
Base Current IB - 0.3 - A
Power Dissipation PT - 65 - W
Storage Temperature TSTG -55 - 150 °C

Instructions for Using TIP29

  1. Handling Precautions:

    • Avoid exposing the TIP29 to temperatures outside the storage range (-55°C to 150°C).
    • Use proper static discharge precautions to prevent damage.
  2. Mounting:

    • Ensure good thermal contact with a heat sink if operating near maximum power dissipation.
    • Use a thermal compound between the transistor and the heat sink for better heat transfer.
  3. Biasing:

    • The base-emitter voltage (VEB) should be kept within the specified limits to avoid damaging the transistor.
    • Ensure the base current (IB) is sufficient to drive the collector current (IC) as required by your application.
  4. Operation:

    • Do not exceed the maximum collector-emitter voltage (VCE) of 60V.
    • The maximum collector current (IC) is 3A. Ensure that the load does not draw more than this current.
    • Keep the power dissipation (PT) below 65W to avoid overheating and potential failure.
  5. Testing:

    • Before final assembly, test the TIP29 in a controlled environment to ensure it meets the required specifications.
    • Use a multimeter to check for continuity and resistance values to verify the integrity of the connections.
  6. Storage:

    • Store the TIP29 in a dry, cool place away from direct sunlight and extreme temperatures.
    • Keep the components in their original packaging until ready for use to protect against static damage.
(For reference only)

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