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MJ2955

Specifications

SKU: 12611764

BUY MJ2955 https://www.utsource.net/itm/p/12611764.html

Parameter Symbol Min Typ Max Unit Notes
Collector-Emitter Voltage VCE - - 60 V
Emitter-Base Voltage VEB -5 - 5 V
Collector Current IC - - 15 A
Power Dissipation PT - - 115 W @ TA = 25°C
Storage Temperature TSTG -65 - 150 °C
Operating Junction Temperature TJ - 125 - °C
Base-Emitter Saturation Voltage VBE(sat) 1.8 2.3 3.0 V @ IC = 15A, IB = 1.5A
Collector-Emitter Saturation Voltage VCE(sat) 0.7 1.0 1.5 V @ IC = 15A, IB = 1.5A
Transition Frequency fT - 4 - MHz
Storage Time tstg - 300 - ns

Instructions for Use:

  1. Heat Sinking: Due to the high power dissipation capability (up to 115W), ensure that the MJ2955 is properly heat-sunk to maintain operating temperatures within safe limits.
  2. Biasing: The base-emitter saturation voltage (VBE(sat)) is relatively high, so ensure that the base current (IB) is sufficient to keep the transistor in saturation when driving heavy loads.
  3. Overvoltage Protection: The maximum collector-emitter voltage (VCE) is 60V. Ensure that the supply voltage does not exceed this limit to avoid damaging the transistor.
  4. Current Limiting: The maximum collector current (IC) is 15A. Use appropriate current limiting resistors or circuits to prevent exceeding this value.
  5. Temperature Management: The operating junction temperature (TJ) should be kept below 125°C. Monitor the temperature and use adequate cooling solutions if necessary.
  6. Storage Conditions: Store the MJ2955 in a dry environment with temperatures between -65°C and 150°C to ensure long-term reliability.
  7. Handling Precautions: Handle the MJ2955 with care to avoid static discharge, which can damage the device. Use proper ESD protection equipment when handling the transistor.
(For reference only)

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