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2SD1196

Specifications

SKU: 12611920

BUY 2SD1196 https://www.utsource.net/itm/p/12611920.html

Parameter Symbol Min Typ Max Unit Conditions
Collector-Emitter Voltage VCE - - 100 V -
Collector-Base Voltage VCB - - 100 V -
Emitter-Base Voltage VEB - - 5 V -
Collector Current IC - 3 5 A Continuous
Peak Collector Current IC(M) - - 10 A Pulse (tp = 1 ms)
Power Dissipation PT - - 100 W TA = 25°C
Storage Temperature Range TSTG -55 - 150 °C -
Operating Temperature Range TOP -55 - 150 °C -
Transition Frequency fT - 10 20 MHz IC = 1 A, VCE = 10 V
DC Current Gain hFE 10 70 200 - IC = 1 A, VCE = 10 V

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper heat sinking to manage power dissipation.
    • Handle with care to avoid mechanical stress and damage to the leads.
  2. Biasing and Operation:

    • Operate within the specified voltage and current limits to avoid damage.
    • Ensure the base-emitter voltage (VEB) does not exceed the maximum rating.
  3. Thermal Management:

    • Maintain the operating temperature within the specified range to ensure reliable performance.
    • Use appropriate cooling methods such as heatsinks or forced air cooling for high-power applications.
  4. Pulse Operation:

    • For pulse applications, ensure the peak collector current (IC(M)) does not exceed the maximum rating for the specified pulse duration.
  5. Storage:

    • Store the device in a dry, cool environment to prevent degradation.
    • Avoid exposure to extreme temperatures and humidity.
  6. Testing:

    • Use appropriate test equipment and methods to verify parameters.
    • Follow safety guidelines to prevent electrical shock and damage to the device.
  7. Soldering:

    • Use a controlled soldering process to avoid thermal shock.
    • Ensure the soldering iron is grounded to prevent static damage.
  8. Applications:

    • Suitable for high-power amplifiers, switching circuits, and other applications requiring high current and voltage handling capabilities.
(For reference only)

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