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2SD1902R

Specifications

SKU: 12611921

BUY 2SD1902R https://www.utsource.net/itm/p/12611921.html

Parameter Symbol Min Typical Max Unit Conditions
Collector-Emitter Voltage VCEO - - 450 V TA = 25°C
Emitter-Collector Voltage VECS - - 450 V TA = 25°C
Collector-Base Voltage VCBO - - 600 V TA = 25°C
Base-Emitter Voltage (Forward) VBE(on) 1.8 2.2 2.6 V IC = 1 A, TA = 25°C
Base-Emitter Voltage (Reverse) VBR(BE) - - 7 V IB = 100 μA, TA = 25°C
Collector Current (Continuous) IC - - 3 A TC = 25°C
Collector Current (Pulse) ICM - - 6 A tp = 1 ms, TA = 25°C
Power Dissipation PT - - 65 W TC = 25°C
Junction Temperature TJ - - 150 °C -
Storage Temperature TSTG -55 - 150 °C -

Instructions for Use:

  1. Mounting and Handling:

    • Handle the 2SD1902R with care to avoid mechanical stress and damage.
    • Ensure proper heat sinking if operating at high power levels to maintain junction temperature within safe limits.
  2. Biasing:

    • Use appropriate biasing circuits to ensure stable operation.
    • Ensure the base-emitter voltage does not exceed the maximum rating to prevent damage.
  3. Operating Conditions:

    • Do not exceed the maximum ratings for collector-emitter voltage, collector current, and power dissipation.
    • Operate within the specified temperature range to ensure reliable performance.
  4. Testing:

    • Use a suitable test setup to verify the parameters under controlled conditions.
    • Refer to the datasheet for detailed testing procedures and recommended test circuits.
  5. Storage:

    • Store the device in a dry, cool place away from direct sunlight and corrosive environments.
    • Follow ESD (Electrostatic Discharge) precautions to avoid damage during storage and handling.
(For reference only)

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