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STP08CP05XTTR

Specifications

SKU: 12612093

BUY STP08CP05XTTR https://www.utsource.net/itm/p/12612093.html

Parameter Symbol Min Typ Max Unit Conditions
Continuous Drain Current ID - 8.0 - A Tc = 25°C, VGS = 10V
Peak Pulse Current Ipp - 32 - A tpp = 100 μs, VGS = 10V
Gate-Source Voltage VGS -5 - 5 V -
Drain-Source Voltage VDS - - 50 V -
Power Dissipation PD - - 1.1 W Tc = 25°C
Junction Temperature Tj - - 150 °C -
Storage Temperature Tstg -65 - 150 °C -
Thermal Resistance RθJC - - 50 K/W Junction to Case

Instructions for Use:

  1. Mounting and Handling:

    • Handle the device with care to avoid mechanical stress.
    • Ensure proper mounting on a heatsink if operating at high power levels to maintain junction temperature within safe limits.
  2. Electrical Connections:

    • Connect the drain (D) to the load or power supply.
    • Connect the source (S) to the ground or return path.
    • Apply the gate-source voltage (VGS) to control the device.
  3. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table.
    • Ensure the gate-source voltage (VGS) is within the specified range to prevent damage.
    • Keep the junction temperature (Tj) below 150°C to avoid thermal runaway.
  4. Pulse Operation:

    • For pulse applications, ensure the peak pulse current (Ipp) does not exceed 32A for pulse durations up to 100 μs.
  5. Storage:

    • Store the device in a dry, cool place within the storage temperature range (-65°C to 150°C).
  6. Testing:

    • When testing the device, use appropriate test equipment and follow safety guidelines to avoid damage to the device or injury.
  7. Derating:

    • Derate the continuous drain current (ID) and power dissipation (PD) as per the derating curve provided in the datasheet for operation at higher temperatures.
  8. Soldering:

    • Follow recommended soldering profiles to avoid thermal shock and damage to the device.
(For reference only)

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