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FTP14N50C

Specifications

SKU: 12612166

BUY FTP14N50C https://www.utsource.net/itm/p/12612166.html

Parameter Symbol Min Typical Max Unit
Collector-Emitter Voltage VCEO - 500 - V
Emitter-Collector Voltage VEBO - 50 - V
Base-Emitter Voltage VBE(sat) - 2.0 3.0 V
Continuous Collector Current IC - 14 - A
Pulse Collector Current IC(pulse) - 56 - A
Power Dissipation PTOT - 125 - W
Junction Temperature TJ -40 - 150 °C
Storage Temperature TSTG -55 - 150 °C

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking to maintain junction temperature within specified limits.
    • Use recommended mounting torque for screws to avoid damage.
  2. Biasing:

    • Apply base current (IB) sufficient to ensure saturation when operating at high collector currents.
    • Avoid exceeding the maximum base-emitter voltage (VBE(sat)).
  3. Overvoltage Protection:

    • Use appropriate overvoltage protection circuits to prevent damage from transient voltages.
  4. Thermal Management:

    • Monitor the junction temperature to prevent overheating, especially during high-power operations.
    • Consider forced air cooling or liquid cooling for continuous high-power applications.
  5. Storage:

    • Store in a dry, cool environment to prevent moisture damage.
    • Handle with care to avoid mechanical stress on the leads and package.
  6. Electrostatic Discharge (ESD) Protection:

    • Use ESD-safe practices when handling the device to prevent damage from static electricity.
  7. Testing:

    • Perform initial testing under controlled conditions to verify performance parameters.
    • Regularly inspect for signs of wear or damage.
  8. Compliance:

    • Ensure compliance with relevant safety and regulatory standards for your application.
(For reference only)

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