Share:


AT45DB321E-SHF2B-T

Specifications

SKU: 12612196

BUY AT45DB321E-SHF2B-T https://www.utsource.net/itm/p/12612196.html

Parameter Description Value
Device Device Name AT45DB321E-SHF2B-T
Type Flash Memory 32 Mbit (4 M x 8)
Package Package Type 44-pin TSSOP
Operating Voltage (VCC) Supply Voltage Range 2.7 V to 3.6 V
Operating Temperature (Toper) Operating Temperature Range -40°C to +85°C
Data Retention Data Retention Time 20 years
Endurance Write/Erase Cycles 100,000 cycles
Access Time (tAC) Access Time 70 ns (max)
Page Size Page Size 264 bytes (256 data + 8 spare)
Sector Size Sector Size 8 KB
Block Size Block Size 64 KB
Programming Time (tPROG) Programming Time per Byte 2.5 μs (max)
Erase Time (tBERS) Block Erase Time 20 ms (max)
Standby Current (ISB) Standby Current 1 μA (max)
Active Current (IOP) Active Current 20 mA (max)
Package Marking Package Marking AT45DB321E SHF2B-T

Instructions for Use

  1. Power Supply:

    • Connect VCC to a stable power supply within the range of 2.7 V to 3.6 V.
    • Connect GND to the ground.
  2. Clock Signal (SCLK):

    • Provide a clock signal to the SCLK pin. The maximum frequency is 66 MHz.
  3. Chip Select (CS):

    • Set CS low to select the device. When CS is high, the device is in standby mode.
  4. Input/Output (I/O0-I/O7):

    • These pins are used for data input and output. They should be connected to the data bus.
  5. Command Execution:

    • Commands are sent to the device by setting CS low, followed by the command code and any required parameters. The device will execute the command and return status or data as appropriate.
  6. Read Operation:

    • To read data, send the Read command (0x34 or 0x3C), followed by the address of the data to be read. The device will then output the data on the I/O pins.
  7. Write Operation:

    • To write data, send the Write command (0x82 or 0x85), followed by the address and the data to be written. The device will program the data into the specified location.
  8. Erase Operation:

    • To erase a block, send the Block Erase command (0x50), followed by the address of the block to be erased. The device will erase the entire block.
  9. Status Check:

    • After executing a command, you can check the status of the device by sending the Read Status Register command (0xD7). The device will return the status register value.
  10. Power Down:

    • To put the device into a low-power state, set CS high and ensure no active commands are being executed.
  11. Handling:

    • Handle the device with care to avoid static discharge, which can damage the device. Use proper ESD protection when handling the device.
  12. Storage:

    • Store the device in a dry, cool place to prevent moisture damage. Follow the recommended storage conditions provided in the datasheet.
(For reference only)

 Inquiry - AT45DB321E-SHF2B-T