Specifications
SKU: 12612323
Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Drain-Source Voltage | VDS | - | 150 | - | V | - |
Gate-Source Voltage | VGS | -15 | 0 | 20 | V | - |
Continuous Drain Current | ID | - | 75 | - | A | TC = 25°C |
Continuous Drain Current | ID | - | 45 | - | A | TC = 100°C |
Pulse Drain Current | IDM | - | 180 | - | A | TC = 25°C, tp = 10 μs, IG = 10 A |
Gate Charge | QG | - | 36 | - | nC | VGS = 15 V, ID = 50 A |
Input Capacitance | Ciss | - | 1500 | - | pF | VDS = 100 V, f = 1 MHz |
Output Capacitance | Coss | - | 160 | - | pF | VDS = 100 V, f = 1 MHz |
Reverse Transfer Capacitance | Crss | - | 320 | - | pF | VDS = 100 V, f = 1 MHz |
On-State Resistance | RDS(on) | - | 0.0085 | - | Ω | VGS = 10 V, ID = 50 A |
Threshold Voltage | VGS(th) | 2.0 | 3.0 | 4.0 | V | ID = 250 μA |
Total Power Dissipation | PTOT | - | 220 | - | W | TC = 25°C |
Junction Temperature | TJ | - | - | 175 | °C | - |
Storage Temperature Range | TSTG | -55 | - | 150 | °C | - |
Instructions for Use:
Handling Precautions:
- Handle the device with care to avoid damage to the pins.
- Use proper ESD (Electrostatic Discharge) protection when handling the device.
Mounting:
- Ensure proper thermal management by using a heatsink if necessary.
- Apply thermal paste between the device and the heatsink for better heat dissipation.
Biasing:
- Apply the gate-source voltage (VGS) within the specified range to ensure reliable operation.
- Avoid exceeding the maximum gate-source voltage to prevent damage to the device.
Current Limiting:
- Do not exceed the continuous drain current (ID) ratings, especially at higher temperatures.
- For pulse applications, ensure that the pulse duration and current do not exceed the specified limits.
Thermal Management:
- Monitor the junction temperature (TJ) to ensure it does not exceed the maximum rating.
- Use appropriate cooling methods to maintain the device within safe operating temperatures.
Capacitance Considerations:
- Be aware of the input, output, and reverse transfer capacitances when designing circuits to avoid instability or excessive switching losses.
Storage:
- Store the device in a dry, cool place within the specified storage temperature range to prevent degradation.
Testing:
- Before finalizing the design, test the device under actual operating conditions to ensure it meets all performance requirements.
Inquiry - FDP075N15A-F102